Include
- SuS 316L 24” electro polished chamber
- Base pressure 5×10-9 torr
- Maximum wafer size: 4 inch
- 4-axes substrate manipulator (XYZ and rotation)
- Radiative substrate heater: 750 oC
- 4 × 2 in magnetron sputter cathodes
- Ar, N2, O2 inlet lines for three cathodes
- FBBEAR entire system control software
Options
- Laser heating stage up 1000 oC
- Pressure control system: upstream
- Mask/Wedge system
- Remote plasma source
- KRI ion source including RFICP and KDC style
- DC, RF or pulsed DC power supply
Feature（Magnetic Application）
- Base pressure : 5E-10 torr
- Co Sputter system
- 6 Sputter Cathodes / and 1 Face to Face
- 4 axis substrate
- SiC Heater 800 degree
- Low Damaged Sputter Cathode Face to Face Co-sputter cathode
High throughput Co-sputter System
