Ion Beam Etching
Categories
IBE etching system is able to do high performance dry etching, because it used large area Kauffman ion source, it can do nano meter scale milling, reactive etching, tilted angle etching.
Application in semiconductor, memory, MEMS field.
OES Process monitoring, End point detection.Substrate can rotation, tilting, sample bias, He back side cooling.
Application in semiconductor, memory, MEMS field.
OES Process monitoring, End point detection.Substrate can rotation, tilting, sample bias, He back side cooling.
- Ideal tool for surface cleaning prior film deposition
- Providing reasonable etching rate regardless of substrate nature (conductivity)
- Working gas: Ar, Kr, Xe, N2, O2, H2, others
- Especially useful in case etching material forms non volatile compounds if reactive ion etching is used
- Working pressure 5E(-4) torr
- Base pressure 5E(-8) torr
- Ion beam size up to 14 cm
- Sample size up to 6 in
- Water cooled manipulator with rotation and tilt up to ±75 degrees
- Modular design
- FBBEAR entire system control software
