Include
- SuS 316L 24” electro polished chamber
- Base pressure 5×10-10 torr
- Maximum wafer size: 4 in
- 4-axes substrate manipulator (XYZ and rotation)
- Radiative substrate heater up to 850 oC
- 4 × 2 in magnetron sputter cathodes
- Ar, N2, O2 inlet lines for three cathodes
- FBBEAR entire system control software
Options
- 3 in sputter cathodes
- Pressure control system: upstream
- Mask / Wedge system
- Remote plasma source
- KRI ion source including RFICP and KDC style
Features (General)
- Base pressure : 2E-10 torr
- Co Sputter system
- 5 Co-Sputter Cathodes
- 4 axis substrate
- SiC Heater 800 degree
Face to Face Sputter (Confocal) with 6 Sample holder, include one heated sample holder
