Inductively Coupled Plasma ( ICP )

Categories

ICP etching is based on RIE with the addition of inductively coupled plasma, and the resulting high-density plasma is surrounded by coils, which will act as secondary coils in the transformer, acelerating electrons and ions, causing collisions to generate more ions and electrons.

Include

High etching rate due to ICP high ion density
1E-6 Torr Base Pressure
2-inch substrate (4 inch maximum)
Water cooling substrate
8 gas line
Low pressure process
Selective Etching
1kW RF generator
Pressure control system
Metal Etching
Formosa System Control Software

Features / Application

For plasmonic spectroscopy diagnostics
Precise wafer temperature control with ESC
Inductively Coupled Plasma Mass Spectrometry
High etch rate
Reactive ion etching
Extensive process parameters
Superior substrate DC bias and ion energy control
Vapor Deposition Thin Film Technology

Options

ICP RIE Include ALD function (patent)

Function